Bipolar resistive switching in Si/Ag nanostructures

被引：9
|
作者：
Dias, C. [1 ,2 ,3 ]
Lv, H. [4 ,5 ]
Picos, R. [6 ]
Aguiar, P. [7 ,8 ]
Cardoso, S. [4 ,5 ]
Freitas, P. P. [4 ,5 ]
Ventura, J. [1 ,2 ,3 ]
机构：
[1] Univ Porto, Fac Sci, IFIMUP, Oporto, Portugal
[2] Univ Porto, Fac Sci, Inst Nanotechnol, Oporto, Portugal
[3] Univ Porto, Fac Sci, Dept Phys & Astron, Oporto, Portugal
[4] INESC MN, Lisbon, Portugal
[5] IN Inst Nanosci & Nanotechnol, Lisbon, Portugal
[6] Univ Illes Balears, Phys Dept, Elect Engn Grp, Palma De Mallorca, Spain
[7] Univ Porto, i3S, Oporto, Portugal
[8] Univ Porto, INEB Inst Engn Biomed, Oporto, Portugal
来源：
APPLIED SURFACE SCIENCE | 2017年 / 424卷
关键词：
Resistive switching; Memristor; Metallic filament; Model; MEMORY; DEVICES; MEMRISTORS; RESISTANCE; SYNAPSE; SYSTEMS;
D O I：
10.1016/j.apsusc.2017.01.140
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Resistive switching devices are being intensively studied aiming a large number of promising applications such as nonvolatile memories, artificial neural networks and sensors. Here, we show nanoscale bipolar resistive switching in Pt/Si/Ag/TiW structures, with a dielectric barrier thickness of 20 nm. The observed phenomenon is based on the formation/rupture of metallic Ag filaments in the otherwise insulating Si host material. No electroforming process was required to achieve resistive switching. We obtained average values of 0.23 V and -0.24 V for the Set and Reset voltages, respectively. The stability of the switching was observed for over 100 cycles, together with a clear separation of the ON (10(3) Omega) and OFF (10(2) Omega) states. Furthermore, the influence of the Set current compliance on the ON resistance, resistances ratio and Set/Reset voltages percentage variation was also studied. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：122 / 126
页数：5
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