Bipolar resistive switching in Si/Ag nanostructures

被引：9

作者：

Dias, C. ^{[1
,2
,3
]}

Lv, H. ^{[4
,5
]}

Picos, R. ^{[6
]}

Aguiar, P. ^{[7
,8
]}

Cardoso, S. ^{[4
,5
]}

Freitas, P. P. ^{[4
,5
]}

Ventura, J. ^{[1
,2
,3
]}

机构：

[1] Univ Porto, Fac Sci, IFIMUP, Oporto, Portugal

[2] Univ Porto, Fac Sci, Inst Nanotechnol, Oporto, Portugal

[3] Univ Porto, Fac Sci, Dept Phys & Astron, Oporto, Portugal

[4] INESC MN, Lisbon, Portugal

[5] IN Inst Nanosci & Nanotechnol, Lisbon, Portugal

[6] Univ Illes Balears, Phys Dept, Elect Engn Grp, Palma De Mallorca, Spain

[7] Univ Porto, i3S, Oporto, Portugal

[8] Univ Porto, INEB Inst Engn Biomed, Oporto, Portugal

来源：

APPLIED SURFACE SCIENCE | 2017年 / 424卷

关键词：

Resistive switching; Memristor; Metallic filament; Model; MEMORY; DEVICES; MEMRISTORS; RESISTANCE; SYNAPSE; SYSTEMS;

D O I：

10.1016/j.apsusc.2017.01.140

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Resistive switching devices are being intensively studied aiming a large number of promising applications such as nonvolatile memories, artificial neural networks and sensors. Here, we show nanoscale bipolar resistive switching in Pt/Si/Ag/TiW structures, with a dielectric barrier thickness of 20 nm. The observed phenomenon is based on the formation/rupture of metallic Ag filaments in the otherwise insulating Si host material. No electroforming process was required to achieve resistive switching. We obtained average values of 0.23 V and -0.24 V for the Set and Reset voltages, respectively. The stability of the switching was observed for over 100 cycles, together with a clear separation of the ON (10(3) Omega) and OFF (10(2) Omega) states. Furthermore, the influence of the Set current compliance on the ON resistance, resistances ratio and Set/Reset voltages percentage variation was also studied. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：122 / 126

页数：5

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