First-principles studies on the effects of halogen adsorption on monolayer antimony

被引:13
作者
Yeoh, Keat Hoe [1 ]
Yoon, Tiem Leong [2 ]
Ong, Duu Sheng [3 ]
Lim, Thong Leng [4 ]
Abdullahi, Yusuf Zuntu [2 ,5 ]
机构
[1] Univ Tunku Abdul Rahman, Lee Kong Chian Fac Engn & Sci, Dept Elect & Elect Engn, Kajang 43000, Selangor, Malaysia
[2] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia
[3] Multimedia Univ, Fac Engn, Persiaran Cyberjaya, Selangor, Malaysia
[4] Multimedia Univ, Fac Engn & Technol, Jalan Ayer Keroh Lama, Melaka 75450, Malaysia
[5] Kaduna State Univ, Fac Sci, Dept Phys, PMB 2339, Kabala Coastain, Kaduna State, Nigeria
关键词
D O I
10.1039/c7cp03028b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using first-principles calculations, we carry out systematic studies on the electronic, magnetic and structural properties of halogenated beta-phase antimonene. We consider two different levels of halogen adatom coverage i.e. Theta = 1/8 and Theta = 1/18. It is found that F, Cl and Br adatoms act as acceptors whereas the I adatom acts as a donor. For a high coverage of Theta = 1/8, halogenated beta-phase antimonene exhibits metallic characteristics. With a lower coverage of Theta = 1/18, through the adsorption of F, Cl and Br the semiconducting unstrained antimonene becomes metallic. In contrast, I-adsorbed antimonene remains semiconducting but exhibits magnetic behavior. We further investigate the effects of bi-axial strain on the halogenated beta-phase antimonene. It is found that bi-axial strain can only induce ferromagnetism on the halogenated antimonene at Theta = 1/18. However, the ferromagnetism is suppressed when the applied strain is high. We uncover that the emergence of strain-dependent magnetism is attributed to the presence of localized states in the bandgap resulting from collective effects of bi-axial strain and the adsorption of halogen atoms.
引用
收藏
页码:25786 / 25795
页数:10
相关论文
共 40 条
  • [11] Size and edge roughness effects on thermal conductivity of pristine antimonene allotropes
    Gupta, Sanjeev K.
    Sonvane, Yogesh
    Wang, Gaoxue
    Pandey, Ravindra
    [J]. CHEMICAL PHYSICS LETTERS, 2015, 641 : 169 - 172
  • [12] Atomic and Electronic Structure of Ultrathin Bi(111) Films Grown on Bi2Te3(111) Substrates: Evidence for a Strain-Induced Topological Phase Transition
    Hirahara, T.
    Fukui, N.
    Shirasawa, T.
    Yamada, M.
    Aitani, M.
    Miyazaki, H.
    Matsunami, M.
    Kimura, S.
    Takahashi, T.
    Hasegawa, S.
    Kobayashi, K.
    [J]. PHYSICAL REVIEW LETTERS, 2012, 109 (22)
  • [13] Electronic structure and half-metallic property of Si3CaC4
    Huang, H. M.
    Yao, K. L.
    [J]. EUROPEAN PHYSICAL JOURNAL B, 2011, 83 (03) : 319 - 323
  • [14] Two-dimensional antimonene single crystals grown by van der Waals epitaxy
    Ji, Jianping
    Song, Xiufeng
    Liu, Jizi
    Yan, Zhong
    Huo, Chengxue
    Zhang, Shengli
    Su, Meng
    Liao, Lei
    Wang, Wenhui
    Ni, Zhenhua
    Hao, Yufeng
    Zeng, Haibo
    [J]. NATURE COMMUNICATIONS, 2016, 7
  • [15] Manipulation of Electronic Transport in the Bi(111) Surface State
    Jnawali, G.
    Klein, C.
    Wagner, Th.
    Hattab, H.
    Zahl, P.
    Acharya, D. P.
    Sutter, P.
    Lorke, A.
    Horn-von Hoegen, M.
    [J]. PHYSICAL REVIEW LETTERS, 2012, 108 (26)
  • [16] Homoepitaxial growth of Bi(111)
    Jnawali, G.
    Hattab, H.
    Bobisch, C. A.
    Bernhart, A.
    Zubkov, E.
    Moeller, R.
    Horn-von Hoegen, M.
    [J]. PHYSICAL REVIEW B, 2008, 78 (03)
  • [17] Theoretical analysis of the chemical bonding and electronic structure of graphene interacting with Group IA and Group VIIA elements
    Klintenberg, M.
    Lebegue, S.
    Katsnelson, M. I.
    Eriksson, O.
    [J]. PHYSICAL REVIEW B, 2010, 81 (08):
  • [18] Electric field effect in ultrathin black phosphorus
    Koenig, Steven P.
    Doganov, Rostislav A.
    Schmidt, Hennrik
    Castro Neto, A. H.
    Oezyilmaz, Barbaros
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (10)
  • [19] Computer graphics and graphical user interfaces as tools in simulations of matter at the atomic scale
    Kokalj, A
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2003, 28 (02) : 155 - 168
  • [20] Ultrathin Bi(110) films on Si(111)√3 x √3-B substrates
    Kokubo, Ikuya
    Yoshiike, Yusaku
    Nakatsuji, Kan
    Hirayama, Hiroyuki
    [J]. PHYSICAL REVIEW B, 2015, 91 (07):