Dislocation microstructures in Si plastically deformed at RT

被引:41
作者
Rabier, J
Cordier, P
Tondellier, T
Demenet, JL
Garem, H
机构
[1] Univ Poitiers, UMR 6630 CNRS, Met Phys Lab, F-86962 Futuroscope Chasseneuil, France
[2] Univ Sci & Technol Lille, ESA CNRS 8008, Lab Struct & Properties Etat Solide, F-59655 Villeneuve Dascq, France
[3] Univ Bayreuth, Bayer Geoinst, D-8580 Bayreuth, Germany
关键词
D O I
10.1088/0953-8984/12/49/305
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Dislocation microstructures induced by plastic deformation at room temperature in Si have been investigated by TEM. Plastic deformation has been obtained by using two types of technique: deformation under a confining pressure of 5 GPa in an anisotropic multi-anvil apparatus and by surface scratching. The TEM observations show common features in the two deformation substructures which are characteristic of high stress-low temperature deformation. The deformation microstructures are built with dislocations with alpha /2(110) Burgers vector in (111) planes which are undissociated. Such dislocations are mainly aligned along the screw orientation and (112) orientations at 30 degrees from the Burgers vectors as well as along (132) orientations at 41 degrees from the Burgers vector. The occurrence of those Peierls valleys confirms that different dislocation core configurations from those usually dealt with at higher temperatures have to be taken into account when dislocations are nucleated at very high stresses.
引用
收藏
页码:10059 / 10064
页数:6
相关论文
共 11 条
  • [11] MOBILITY OF PARTIAL DISLOCATIONS IN SILICON
    WESSEL, K
    ALEXANDER, H
    [J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (06): : 1523 - 1536