Fabrication of ZnSe/Si P-I-N photodiode by IR furnace chemical vapor deposition

This paper reports the characteristics of the ZnSe(n(+))/ZnSe(n(-))/Si(p) P-I-N photodiode in the temperature range of 10-300 K. In this paper, the ZnSe epilayers are grown on p-type (111) Si substrate by using an IR CVD system and two-step growth methods. Since the resistivity of the intrinsic ZnSe layer is high, in order to obtain an n-type ZnSe layer, we adopt indium (In) as the dopant. To control the indium drive in time, the ZnSe(n(+))/ZnSe(n(-)) epilayers on the Si structure are used to fabricate the ZnSe(n(+))/ZnSe(n(-))/Si(pP-I-N photodiode. On the other hand, the characteristics of the ZnSe(n(+))/ZnSe(n(-))/Si(p) heterojunction P-I-N photodiode will also be discussed, such as the cutting voltage, photocurrent and responsivity from 10 K to 300 K. Published by Elsevier Science Ltd. All rights reserved.