Three-dimensional numerical simulation for anisotropic wet chemical etching process

被引：0

作者：

Lee, J.-G. ^{[1
]}

Won, T. ^{[1
]}

机构：

[1] Inha Univ, Sch Engn, Dept Elect Engn, Inchon 402751, South Korea

来源：

MOLECULAR SIMULATION | 2007年 / 33卷 / 07期

关键词：

anisotropic etch simulator; wet etching; three-dimensional simulation; bulk micromaching;

D O I：

10.1080/08927020601067508

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we present result on the development of a simulation tool for the three-dimensional anisotropic wet chemical etching for bulk micromaching. Our developed simulator comprises step of calculation the movement of the surface. It is based upon the data structure with movement of the surface cell list which has list and list 2, respectively. The surface cell has the topography evolution information which has etch properties according to crystallographic position of surface cell and cell volume value. The topography evolution information evolves movement of the surface. The performance of our developed simulator was investigated with our three-dimensional simulation results. Several simulation results demonstrate our simulation tool which is quite efficient for the design and development of MEMS device structure. The developed simulator demonstrates the applicability of complex three-dimensional MEMS device structure. We demonstrate the simulation of the anisotropic wet chemical etching process of basic exemplary structures featuring the virtual fabrication of an MEMS structure manufactured by means of bulk micromachining.

引用

页码：593 / 597

页数：5

共 11 条

[1] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J].

BASSOUS, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1178-1185

[2] MODELING OF ANISOTROPIC ETCHING IN SILICON-BASED SENSOR APPLICATION [J].

CAMON, H ;

GUE, AM ;

DANEL, JS ;

DJAFARIROUHANI, M .

SENSORS AND ACTUATORS A-PHYSICAL, 1992, 33 (1-2) :103-105

[3]

Hubbard TJ, 1997, SENSOR MATER, V9, P437

[4]

Kim B, 2005, J KOREAN PHYS SOC, V46, P460

[5]

Kohler M., 1999, ETCHING MICROSYSTEM

[6] Bulk micromachining of silicon [J].

Kovacs, GTA ;

Maluf, NI ;

Petersen, KE .

PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1536-1551

[7] Qualitative interpretation of etch profile nonuniformity using a wavelet and a neural network [J].

Lee, HS ;

Kim, B ;

Choi, SR ;

Hong, WS ;

Lee, KK ;

Choi, WS ;

Lim, MT .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (05) :817-821

[8]

*MANCEF, INT ROADM EX SUMM

[9] GUT-PASSAGE, PARTICLE SELECTION AND INGESTION OF FILTER-FEEDING BLACKFLY (DIPT, SIMULIIDAE) LARVAE INHABITING A WATERFALL IN TAHITI (FRENCH-POLYNESIA) [J].

SCHRODER, P .

AQUATIC INSECTS, 1988, 10 (01) :1-16

[10] Simulating the behavior of MEMS devices: Computational methods and needs [J].

Senturia, SD ;

Aluru, N ;

White, J .

IEEE COMPUTATIONAL SCIENCE & ENGINEERING, 1997, 4 (01) :30-43

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