Scanning tunneling microscopy and spectroscopy of the semi-insulating CdZnTe(110) surface

被引：4
作者：
Egan, C. K. [1 ]
Choubey, A. [1 ]
Brinkman, A. W. [1 ]
机构：
[1] Univ Durham, Dept Phys, Durham DH1 3LE, England
来源：
SURFACE SCIENCE | 2010年 / 604卷 / 19-20期
基金：
英国工程与自然科学研究理事会;
关键词：
STM; STS; CdTe; CdZnTe; Semi-insulating; COMPOUND SEMICONDUCTOR SURFACES; CADMIUM ZINC TELLURIDE; CDTE; COMPENSATION; CRYSTALS; GROWTH;
D O I：
10.1016/j.susc.2010.07.014
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The morphology and electronic structure of the (110) surface of semi-insulating CdZnTe has been studied by scanning tunneling microscopy and spectroscopy. The surface shows a 1 x 1 reconstruction whilst the tunneling spectra are highly rectified implying that imaging could only be performed at negative sample bias. Theoretical computations of the tunnel current have been used to fit to experiment to reveal the origin of each tunneling component and explain the rectification observed. The implications of various surface defects and surface states are considered. A discussion on scanning tunneling microscopy and spectroscopy on semi-insulating materials in general is also given. (C) 2010 Elsevier B.V. All rights reserved.
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页码：1825 / 1831
页数：7
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