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A new set of initial conditions for fast and accurate calculation of base transit time and collector current density in bipolar transistors
被引:2
作者
:
Ma, PX
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
Ma, PX
[
1
]
Zhang, SL
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
Zhang, SL
[
1
]
Ostling, M
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
Ostling, M
[
1
]
机构
:
[1]
Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
来源
:
SOLID-STATE ELECTRONICS
|
1998年
/ 42卷
/ 11期
关键词
:
D O I
:
10.1016/S0038-1101(98)00174-9
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:2023 / 2026
页数:4
相关论文
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[1]
Analytical modelling of BJT neutral base region under variable injection conditions
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Dept. d'Enginyeria Electronica, Univ. Politecnica de Catalunya, 08034 Barcelona, c/Gran Capita
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[2]
CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
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THOMAS, RE
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
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55
(12):
: 2192
-
+
[3]
Analytical model of collector current density and base transit time based on iteration method
Ma, P
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0
引用数:
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h-index:
0
机构:
Institute of Microelectronics, Peking University
Ma, P
Zhang, L
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机构:
Institute of Microelectronics, Peking University
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Wang, Y
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[J].
SOLID-STATE ELECTRONICS,
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(11)
: 1683
-
1686
[4]
Analytical relations for the base transit time and collector current in BJTs and HBTs
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Department of Electronic Engineering, University of Naples, 80125 Naples, via Claudio
Rinaldi, N
[J].
SOLID-STATE ELECTRONICS,
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Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels
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[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
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[6]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
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PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
DEGRAAFF, HC
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PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
[J].
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ANALYTICAL BASE TRANSIT-TIME MODEL FOR HIGH-INJECTION REGIONS
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SUZUKI, K
[J].
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ANALYTICAL BASE TRANSIT-TIME MODEL OF UNIFORMLY-DOPED-BASE BIPOLAR-TRANSISTORS FOR HIGH-INJECTION REGIONS
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SUZUKI, K
[J].
SOLID-STATE ELECTRONICS,
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-
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←
1
→
共 8 条
[1]
Analytical modelling of BJT neutral base region under variable injection conditions
Bardes, D
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. d'Enginyeria Electronica, Univ. Politecnica de Catalunya, 08034 Barcelona, c/Gran Capita
Bardes, D
Alcubilla, R
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. d'Enginyeria Electronica, Univ. Politecnica de Catalunya, 08034 Barcelona, c/Gran Capita
Alcubilla, R
[J].
SOLID-STATE ELECTRONICS,
1997,
41
(08)
: 1177
-
1180
[2]
CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
论文数:
0
引用数:
0
h-index:
0
CAUGHEY, DM
THOMAS, RE
论文数:
0
引用数:
0
h-index:
0
THOMAS, RE
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1967,
55
(12):
: 2192
-
+
[3]
Analytical model of collector current density and base transit time based on iteration method
Ma, P
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Microelectronics, Peking University
Ma, P
Zhang, L
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Microelectronics, Peking University
Zhang, L
Wang, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Microelectronics, Peking University
Wang, Y
[J].
SOLID-STATE ELECTRONICS,
1996,
39
(11)
: 1683
-
1686
[4]
Analytical relations for the base transit time and collector current in BJTs and HBTs
Rinaldi, N
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic Engineering, University of Naples, 80125 Naples, via Claudio
Rinaldi, N
[J].
SOLID-STATE ELECTRONICS,
1997,
41
(08)
: 1153
-
1158
[5]
Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels
Rinaldi, NF
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronic Engineering, University of Naples
Rinaldi, NF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1996,
43
(08)
: 1256
-
1263
[6]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(10)
: 857
-
862
[7]
ANALYTICAL BASE TRANSIT-TIME MODEL FOR HIGH-INJECTION REGIONS
SUZUKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd, Atsugi, 243-01
SUZUKI, K
[J].
SOLID-STATE ELECTRONICS,
1994,
37
(03)
: 487
-
493
[8]
ANALYTICAL BASE TRANSIT-TIME MODEL OF UNIFORMLY-DOPED-BASE BIPOLAR-TRANSISTORS FOR HIGH-INJECTION REGIONS
SUZUKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Laboratories Ltd 10-1 Morinosato-Wakamiga Atsugi
SUZUKI, K
[J].
SOLID-STATE ELECTRONICS,
1993,
36
(01)
: 109
-
110
←
1
→