Understanding Bond Relaxation and Electronic Properties of T-Type WTe2/MoS2 Heterostructure using Binding Energy and Bond Charge Models

被引:6
作者
Qiu, Hongrong [1 ]
Li, Hanze [1 ]
Wang, Jiannan [1 ]
Zhu, Yunhu [1 ]
Bo, Maolin [1 ]
机构
[1] Yangtze Normal Univ, Key Lab Extraordinary Bond Engn & Adv Mat Technol, Chongqing 408100, Peoples R China
来源
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2022年 / 16卷 / 03期
关键词
band structure; bond relaxation; density of states; electronic properties; T-type heterostructures; WTe2; MoS2; HETEROJUNCTION; MOS2; PHOTOLUMINESCENCE; EFFICIENCY;
D O I
10.1002/pssr.202100444
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Binding energy and bond charge models and the topological concept to obtain the nonbonding, bonding, and antibonding states of the T-type WTe2/MoS2 heterostructure are combined. It is found that the electronic probability and electronic dispersion in the valence band of the WTe2/MoS2 heterostructure can be precisely determined based on electronic entropy. The energy-band projection method and electronic entropy are remarkable approaches for analyzing the electronic properties of various structures based on density functional theory calculations. Hence, a new method is provided to describe the electronic properties of T-type heterostructures, and the electron and bonding state probabilities are calculated.
引用
收藏
页数:8
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