Study of Si-Ge-Sn based Heterobipolar Phototransistor (HPT) exploiting Quantum Confined Stark Effect and Franz Keldysh effect with and without resonant cavity

被引：13

作者：

Ghosh, Soumava ^{[1
]}

Mukhopadhyay, Bratati ^{[1
]}

Sen, Gopa ^{[1
]}

Basu, P. K. ^{[1
]}

机构：

[1] Inst Radio Phys & Elect, 92 APC Rd, Kolkata 700009, India

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2019年 / 106卷

关键词：

HPT; QCSE; FKE; RCE; WAVE-GUIDE PHOTODETECTORS; ELECTROABSORPTION; GAIN; SEMICONDUCTORS; ENHANCEMENT; PERFORMANCE; MODEL;

D O I：

10.1016/j.physe.2018.10.012

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the performance of a Quantum Confined Stark Effect (QCSE) dominated resonant cavity enhanced (RCE) Heterobipolar Phototransistor (HPT) using an absorption layer of Ge0.992Sn0.008 QW with Si0.3Ge0.61Sn0.09 barrier between base and collector. Further the QW is replaced by bulk GeSn so that Franz-Keldysh Effect (FKE) becomes predominant. Main analysis was concentrated on finding the Quantum Efficiency (QE), Responsivity of RCE-HPT. Finally the Optical gain, Gain-Bandwidth product are estimated and compared with the structure without resonant cavity.

引用

页码：62 / 67

页数：6

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