Extensive electromechanical characterization of PZT thin films for MEMS applications by electrical and mechanical excitation signals

被引：27

作者：

Prume, Klaus ^{[1
]}

Muralt, Paul ^{[2
]}

Calame, Florian ^{[2
]}

Schmitz-Kempen, Thorsten ^{[1
]}

Tiedke, Stephan ^{[1
]}

机构：

[1] AixACCT Syst GmbH, D-52068 Aachen, Germany

[2] Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF ELECTROCERAMICS | 2007年 / 19卷 / 04期

关键词：

piezoelectric coefficients d(33; f) and e(31; f); PZT thin film; 4-point bending; MEMS devices;

D O I：

10.1007/s10832-007-9065-y

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we present a unique measurement method to estimate the effective transverse piezocoefficient e(31,f) of piezoelectric thin films which is often used in micro electromechanical systems (MEMS). This method utilizes basically a 4-point bending setup specially adapted to be used with thin film samples. It allows the application of very homogeneous well defined mechanical stresses to the device. Stress and corresponding strain distribution are verified by Finite Element simulations. Measurements are shown to demonstrate the capability and repeatability of the setup on sol-gel processed PZT thin film samples. In conjunction with additional measurement results it is possible to fully determine the electromechanical characteristics.

引用

页码：407 / 411

页数：5

共 15 条

[1]

*ASTM, 1994, C161194 STAND TEST M

[2]

Budd K. D., 1985, British Ceramic Proceedings, P107

[3] Measurement of the effective transverse piezoelectric coefficient e31,f of AlN and Pb(Zrx,Ti1-x)O3 thin films [J].