TiSi2/Si interface instability in plasma-assisted chemical vapor deposition of titanium

被引：10

作者：

Ohshita, Y ^{[1
]}

Oshida, M ^{[1
]}

Seki, M ^{[1
]}

Watanabe, K ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 193卷 / 03期

关键词：

D O I：

10.1016/S0022-0248(98)00490-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The heterointerface between a Si(1 0 0) Substrate and a TiSi2 laver becomes rough when the substrate temperature during the formation of the TiSi2 layer by plasma-assisted chemical vapor deposition using the TiCl4/H-2/Ar gas system is between 650 and 750 degrees C. In this temperature range, the Si substrate is etched and pits that have (1 0 0) and(1 1 1) vicinal surfaces can be observed at the heterointerface. At higher or lower temperatures. however, a smooth interface is created. This morphological instability appears to be due to the processes of Cl desorption from the surface during the Ti deposition. (C) 1998 Elsevier Science B.V. AU rights reserved.

引用

页码：322 / 327

页数：6