I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band

被引：49

作者：

Tischer, Ingo ^{[1
]}

Feneberg, Martin ^{[1
]}

Schirra, Martin ^{[1
]}

Yacoub, Hady ^{[1
]}

Sauer, Rolf ^{[1
]}

Thonke, Klaus ^{[1
]}

Wunderer, Thomas ^{[2
]}

Scholz, Ferdinand ^{[2
]}

机构：

[1] Univ Ulm, Inst Quantenmaterie, Grp Halbleiterphys, D-89069 Ulm, Germany

[2] Univ Ulm, Inst Optoelekt, D-89069 Ulm, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 03期

关键词：

GALLIUM NITRIDE;

D O I：

10.1103/PhysRevB.83.035314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the 3.32 eV defect-related emission band in GaN correlating transmission electron microscopy and spatially and spectrally resolved cathodoluminescence at low temperature. The band is unambiguously associated with basal plane stacking faults of type I-2, which are a common defect type in semi- and nonpolar GaN grown on foreign substrates. We ascribe the luminescence to free-to-bound transitions. The suggested intrinsic acceptors involved have an ionization energy of approximate to 0.17 eV, and are located at the I-2-type basal plane stacking faults.

引用

页数：6

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