Control of the growth mechanism of (119) Bi-2223 superconducting thin films. Two-dimensional nucleation growth and step-flow growth

被引:0
|
作者
Endo, K
Badica, P
Aldica, G
机构
[1] Natl Inst Mat Phys, RO-76900 Bucharest, Romania
[2] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源
关键词
(119) Bi-2223 thin films; MOCVD; superconductivity; growth mechanism; vicinal substrate;
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Films of (119) Bi-2223 high-T-c superconductor, potentially useful for future sandwich-stacked structures exhibiting Josephson effect have been prepared by MOCVD on (100) NdGaO3 and (110) SrTiO3 flat and vicinal substrates with different off-angles. It is shown that off-angle is a key parameter in growth control mechanism of the films. In-plane aligned films, with regular morphology and low roughness as well as having maximum zero-resistivity critical temperature: of T-c0=67.2K and T-c0=74K when "single" and "two"-temperature growth routes are used, respectively, have been obtained for high of-angles (20 degrees). Growth mechanism is changing from a two-dimensional type for the flat substrate to a step-flow one for vicinal substrates.
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页码:1023 / 1028
页数:6
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