Polarization switching of the optical gain in semipolar InGaN quantum wells

被引：24

作者：

Scheibenzuber, W. G. ^{[1
]}

Schwarz, U. T. ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] Univ Freiburg, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 03期

关键词：

GaN; InGaN; semiconductor lasers; semipolar planes; quantum wells; NONPOLAR;

D O I：

10.1002/pssb.201046262

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier concentration using self-consistent 6 x 6 k.p-band structure calculations. The semipolar planes considered here are the (11 (2) over bar2)- and the (20 (2) over bar1)-plane. In contrast to the (20 (2) over bar1)-plane, the dominant polarization of the optical gain in a QW on the (11 (2) over bar2)-plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：647 / 651

页数：5

共 50 条

[41] On the optical polarization properties of semipolar (20(2)over-bar1) and (20(2)over-bar(1)over-bar) InGaN/GaN quantum wells [J].

Mounir, Christian ;

Koslow, Ingrid L. ;

Wernicke, Tim ;

Kneissl, Michael ;

Kuritzky, Leah Y. ;

Adamski, Nicholas L. ;

Oh, Sang Ho ;

Pynn, Christopher D. ;

DenBaars, Steven P. ;

Nakamura, Shuji ;

Speck, James S. ;

Schwarz, Ulrich T. .

JOURNAL OF APPLIED PHYSICS, 2018, 123 (08)

[42] OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS [J].

Weng, Guo-En ;

Zhang, Bao-Ping ;

Liang, Ming-Ming ;

Lv, Xue-Qin ;

Zhang, Jiang-Yong ;

Ying, Lei-Ying ;

Qiu, Zhi Ren ;

Yaguchi, H. ;

Kuboya, S. ;

Onabe, K. ;

Chen, Shao-Qiang ;

Akiyama, H. .

FUNCTIONAL MATERIALS LETTERS, 2013, 6 (02)

[43] Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well [J].

Zeng, Fanming ;

Zhu, Lihong ;

Liu, Wei ;

Liu, Weicui ;

Wang, Hongwei ;

Liu, Baolin .

IEEE PHOTONICS JOURNAL, 2016, 8 (03)

[44] Confinement effects on valence-subband character and polarization anisotropy in (11(2)over-bar2) semipolar InGaN/GaN quantum wells [J].

Roberts, Christopher ;

Yan, Qimin ;

Miao, Mao-Sheng ;

Van de Walle, Chris G. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)

[45] Optical excitation dependent emission properties of InGaN quantum wells [J].

J. Hader ;

J. V. Moloney ;

S. W. Koch .

Journal of Computational Electronics, 2015, 14 :425-431

[46] Optical excitation dependent emission properties of InGaN quantum wells [J].

Hader, J. ;

Moloney, J. V. ;

Koch, S. W. .

JOURNAL OF COMPUTATIONAL ELECTRONICS, 2015, 14 (02) :425-431

[47] Excitonic optical absorption in wurtzite InGaN/GaN quantum wells [J].

Wei, Shuyi ;

Jia, Yalei ;

Xia, Congxin .

SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (01) :9-15

[48] Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures [J].

Chen, CC ;

Hsueh, TH ;

Ting, YS ;

Chi, GC ;

Chang, CA ;

Wang, SC .

SOLID-STATE ELECTRONICS, 2003, 47 (03) :575-578

[49] Influence of Stark Effect and Quantum Wells Thickness on Optical Properties of InGaN laser Diodes [J].

Dong, Shaoguang ;

Chen, Guojie .

ADVANCED MATERIALS & SPORTS EQUIPMENT DESIGN, 2014, 440 :25-30

[50] Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth [J].

Sugiyama, Masakazu ;

Shioda, Tomonari ;

Tomita, Yuki ;

Yamamoto, Takahisa ;

Ikuhara, Yuichi ;

Nakano, Yoshiaki .

MATERIALS TRANSACTIONS, 2009, 50 (05) :1085-1090

← 1 2 3 4 5 →