Polarization switching of the optical gain in semipolar InGaN quantum wells

被引：24

作者：

Scheibenzuber, W. G. ^{[1
]}

Schwarz, U. T. ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] Univ Freiburg, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 03期

关键词：

GaN; InGaN; semiconductor lasers; semipolar planes; quantum wells; NONPOLAR;

D O I：

10.1002/pssb.201046262

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier concentration using self-consistent 6 x 6 k.p-band structure calculations. The semipolar planes considered here are the (11 (2) over bar2)- and the (20 (2) over bar1)-plane. In contrast to the (20 (2) over bar1)-plane, the dominant polarization of the optical gain in a QW on the (11 (2) over bar2)-plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：647 / 651

页数：5

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