Polarization switching of the optical gain in semipolar InGaN quantum wells

被引：24

作者：

Scheibenzuber, W. G. ^{[1
]}

Schwarz, U. T. ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] Univ Freiburg, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 03期

关键词：

GaN; InGaN; semiconductor lasers; semipolar planes; quantum wells; NONPOLAR;

D O I：

10.1002/pssb.201046262

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier concentration using self-consistent 6 x 6 k.p-band structure calculations. The semipolar planes considered here are the (11 (2) over bar2)- and the (20 (2) over bar1)-plane. In contrast to the (20 (2) over bar1)-plane, the dominant polarization of the optical gain in a QW on the (11 (2) over bar2)-plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：647 / 651

页数：5

共 50 条

[21] Light emission polarization properties of strained (11(2)over-bar2) semipolar InGaN quantum well [J].

Huang, Hung-Hsun ;

Wu, Yuh-Renn .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)

[22] Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes [J].

Scheibenzuber, W. G. ;

Schwarz, U. T. ;

Veprek, R. G. ;

Witzigmann, B. ;

Hangleiter, A. .

PHYSICAL REVIEW B, 2009, 80 (11)

[23] Light emission polarization properties of semipolar InGaN/GaN quantum well [J].

Huang, Hung-Hsun ;

Wu, Yuh-Renn .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (05)

[24] Optical properties in wurtzite InGaN staggered quantum wells [J].

Geng, Zhenduo ;

Wang, Yuping .

MODERN PHYSICS LETTERS B, 2015, 29 (15)

[25] Gain characteristics of InGaN-GaN quantum wells [J].

Jiang, HT ;

Singh, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (09) :1058-1064

[26] Gain characteristics of InGaN quantum wells with AlGaInN barriers [J].

Fu, Hanlin ;

Sun, Wei ;

Ogidi-Ekoko, Onoriode ;

Goodrich, Justin C. ;

Tansu, Nelson .

AIP ADVANCES, 2019, 9 (04)

[27] Optical properties of type-II InGaN/GaAsN/GaN quantum wells [J].

Park, Seoung-Hwan ;

Lee, Yong-Tak ;

Park, Jongwoon .

OPTICAL AND QUANTUM ELECTRONICS, 2009, 41 (11-13) :779-785

[28] Optical properties of type-II InGaN/GaAsN/GaN quantum wells [J].

Seoung-Hwan Park ;

Yong-Tak Lee ;

Jongwoon Park .

Optical and Quantum Electronics, 2009, 41 :779-785

[29] Measurement of the internal quantum efficiency of InGaN quantum wells [J].

Laubsch, A. ;

Sabathil, M. ;

Bruederl, G. ;

Wagner, J. ;

Strassburg, M. ;

Baur, E. ;

Braun, H. ;

Schwarz, U. T. ;

Lell, A. ;

Lutgen, S. ;

Linder, N. ;

Oberschmid, R. ;

Hahn, B. .

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS XI, 2007, 6486

[30] Optical anisotropy in nonpolar (1120)-oriented a-plane InGaN/GaN quantum wells [J].

Park, Seoung-Hwan ;

Hong, Atoo-Pyo ;

Kim, Jong-Jae .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (05) :1835-1838

← 1 2 3 4 5 →