Polarization switching of the optical gain in semipolar InGaN quantum wells

被引：23
|
作者：
Scheibenzuber, W. G. [1 ]
Schwarz, U. T. [2 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
[2] Univ Freiburg, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 03期
关键词：
GaN; InGaN; semiconductor lasers; semipolar planes; quantum wells; NONPOLAR;
D O I：
10.1002/pssb.201046262
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate the influence of polarization switching on the optical gain of semipolar InGaN quantum wells (QWs) depending on indium content and charge carrier concentration using self-consistent 6 x 6 k.p-band structure calculations. The semipolar planes considered here are the (11 (2) over bar2)- and the (20 (2) over bar1)-plane. In contrast to the (20 (2) over bar1)-plane, the dominant polarization of the optical gain in a QW on the (11 (2) over bar2)-plane can depend on both the indium content and the charge carrier concentration, as reported from experiments. These effects are explained by a detailed analysis of the wave function composition of the topmost valence bands in a semipolar QW. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：647 / 651
页数：5
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