Magnetic properties of V-doped ZnO thin films

被引:44
作者
Hong, NH
Sakai, J
Hassini, A
机构
[1] Univ Tours, CNRS, CEA, UMR 6157,Lab LEMA, F-37200 Tours, France
[2] JAIST, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
关键词
D O I
10.1063/1.1848451
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferromagnetic V-doped ZnO films were fabricated by the conventional pulsed-laser deposition technique on R-cut sapphire substrates from a ceramic target that was made by sol-gel method. All films are highly crystallized to be wurtzite. V-doped ZnO thin films grown at 600-650 degrees C show room-temperature ferromagnetism along with a spin-glass-like behavior at low temperatures. It is found that V atoms were distributed very uniformly in the ZnO matrix. However, different growth conditions could result in different values of the saturation magnetic moment, and an increase of the substrate temperature above 650 degrees C seems to favor a secondary phase, which is antiferromagnetic. (c) 2005 American Institute of Physics.
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页数:3
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