Evolution of Total Ionizing Dose Effects in MOS Devices With Moore's Law Scaling

被引:143
作者
Fleetwood, Daniel M. [1 ]
机构
[1] Vanderbilt Univ, Elect Engn & Comp Sci Dept, Nashville, TN 37235 USA
关键词
Bipolar devices; defects; enhanced low-dose-rate sensitivity (ELDRS); hydrogen; interface traps; MOS; oxide traps; total ionizing dose (TID); THERMALLY-STIMULATED-CURRENT; INTERFACE-TRAP FORMATION; INDUCED DEFECT FORMATION; ELECTRON-SPIN-RESONANCE; BIPOLAR LINEAR CIRCUITS; INDUCED LEAKAGE CURRENT; 1/F NOISE; BORDER TRAPS; X-RAY; HARDNESS ASSURANCE;
D O I
10.1109/TNS.2017.2786140
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The general reduction in the thicknesses of critical dielectric layers driven by Moore's law scaling has led to increasingly more manageable total-ionizing-dose (TID) response over the last similar to 50 years. Effects of oxide, interface, and border traps in MOS gate oxides on TID response are now mostly well known for SiO2 gate dielectrics, and the leakage currents due to isolation oxides can be conservatively bounded with existing test methods. Radiation hardened and/or radiation-tolerant technologies have been developed that can survive doses that exceed 1 Mrad(SiO2). Advances in computing technology enabled by Moore's law scaling and concomitant enhancements in computational techniques have greatly facilitated the modeling and simulation of TID effects in microelectronic devices and ICs. However, the TID response of nanoscale MOS devices with advanced gate stacks and high-K gate dielectrics, and/or alternative materials to Si, is often more complex than for MOS devices with SiO2 gate oxides. TID challenges remain for linear bipolar technologies that exhibit enhanced low-dose-rate sensitivity and for microelectronic devices that must function at doses above similar to 100 Mrad(SiO2), e.g., in high luminosity accelerator environments. TID effects have also recently been observed in wide bandgap semiconductor devices (e.g., GaN/AlGaN HEMTs) with no gate oxide.
引用
收藏
页码:1465 / 1481
页数:17
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