Growth of M-plane GaN on (100) LiGaO2 by plasma-assisted molecular beam epitaxy

被引：13

作者：

Schuber, R. ^{[1
]}

Chou, M. M. C. ^{[2
]}

Schaadt, D. M. ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, CFN, Inst Appl Phys DFG, D-76131 Karlsruhe, Germany

[2] Natl Sun Yat Sen Univ, Dept Mat Sci & Optoelect Engn, Kaohsiung 80424, Taiwan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 23期

关键词：

Molecular beam epitaxy; Gallium nitride; Lithium gallium oxide; Non-Polar nitrides; Crystal structure; X-RAY-DIFFRACTION; FILMS; MBE; SUBSTRATE; CRYSTAL;

D O I：

10.1016/j.tsf.2010.06.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of M-plane GaN on (100) LiGa0(2) was achieved using plasma-assisted molecular beam epitaxy Thermal annealing of the LiGa0(2) wafer was found to lead to a substrate surface suitable for growth Structural and morphological analysis was performed using x-ray and reflective high energy electron diffraction, scanning electron and atomic force microscopy. X-ray diffraction results show very high phase purity and a relaxation state of the GaN film close to 80%. The surface morphology, showing characteristic M-plane streaks, is flat and smooth. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：6773 / 6776

页数：4

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