Monte Carlo investigation of the influence of V/III flux ratio on GaAs/GaAs(001) submonolayer epitaxy

被引：4

作者：

Ageev, O. A. ^{[1
]}

Solodovnik, M. S. ^{[1
]}

Balakirev, S. V. ^{[1
]}

Mikhaylin, I. A. ^{[1
]}

机构：

[1] Southern Fed Univ, Inst Nanotechnol Elect & Elect Equipment Engn, Ul Shevchenko 2, Taganrog 347922, Russia

来源：

TECHNICAL PHYSICS | 2016年 / 61卷 / 07期

基金：

俄罗斯科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; INTERACTION KINETICS; QUANTUM DOTS; GAAS; GROWTH; DIFFUSION; SURFACE; NUCLEATION; AS-2; DEPENDENCE;

D O I：

10.1134/S1063784216070021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the V/III flux ratio on the submonolayer growth of GaAs on the GaAs (001) surface is simulated by the Monte Carlo method. Growth is carried out using the method of molecular beam epitaxy at different values of process parameters. The surface density of islands against the V/III flux ratio is calculated. The saturation value of the surface density at 580A degrees C is found to be 2 x 10(12) cm(-2), which is in agreement with the experimental data. The V/III flux ratio influences the island density most strongly at a reduced temperature (550A degrees C) and an elevated growth rate (a monolayer per second), when the arsenic desorption is weak. The fraction of arsenic atoms in the growing film is estimated under different process conditions. It has been shown that, as the surface coverage rises, the influence of the V/III flux ratio on the fraction of arsenic atoms becomes weaker.

引用

页码：971 / 977

页数：7

共 32 条

[1] A Monte Carlo investigation of Gallium and Arsenic migration on GaAs(100) surface [J].

Amrani A. ;

Djafari Rouhani M. ;

Mraoufel A. .

Applied Nanoscience, 2011, 1 (1) :59-65

[2] Nucleation and growth of islands on GaAs surfaces [J].

Avery, AR ;

Dobbs, HT ;

Holmes, DM ;

Joyce, BA ;

Vvedensky, DD .

PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3938-3941

[3]

Balakirev S. V., 2014, IZV YUZHNOGO FEDERAL, P93

[4] FORMATION OF SUPER AS-RICH GAAS(100) SURFACES BY HIGH-TEMPERATURE EXPOSURE TO ARSINE [J].

BANSE, BA ;

CREIGHTON, JR .

APPLIED PHYSICS LETTERS, 1992, 60 (07) :856-858

[5] CONTRIBUTION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TO NANOMETER TAILORING OF SURFACES AND INTERFACES BY MOLECULAR-BEAM EPITAXY [J].

DAWERITZ, L ;

PLOOG, K .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (02) :123-136

[6] Growth kinetics of thin films formed by nucleation during layer formation [J].

Dubrovskii, VG ;

Cirlin, GE .

SEMICONDUCTORS, 2005, 39 (11) :1267-1274

[7] Quantum Monte Carlo calculations of H2 dissociation on Si(001) -: art. no. 166102 [J].

Filippi, C ;

Healy, SB ;

Kratzer, P ;

Pehlke, E ;

Scheffler, M .

PHYSICAL REVIEW LETTERS, 2002, 89 (16) :166102/1-166102/4

[8] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1977, 64 (01) :293-304

[9] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1975, 50 (02) :434-450

[10] A COMPARATIVE-STUDY OF THE INTERACTION KINETICS OF AS2 AND AS4 MOLECULES WITH GA-RICH GAAS (001) SURFACES [J].

GARCIA, JC ;

NERI, C ;

MASSIES, J .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (03) :511-518

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