Light-Emitting Diodes Fabricated From Carbon Ions Implanted Into p-Type Silicon

被引：1

作者：

Purdy, Sarah K. ^{[1
]}

Knights, Andrew P. ^{[2
]}

Bradley, Michael Patrick ^{[1
]}

Chang, Gap Soo ^{[1
]}

机构：

[1] Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5A8, Canada

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L8, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Amorphous silicon (a-Si); electroluminescence (EL); electron energy loss spectroscopy (EELS); ion implantation; light-emitting diode (LED); Schottky diode; silicon carbide (SiC); transmission electron microscopy (TEM); ELECTROLUMINESCENCE; PHOTOLUMINESCENCE;

D O I：

10.1109/TED.2015.2395995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-based light-emitting diodes (LEDs) are fabricated using p-type silicon implanted with C+ ions and postannealed at 1000 degrees C in flowing nitrogen. The ion implantation is carried out at ambient temperature (AT) and 400 degrees C to investigate the influence of high-temperature implantation on the luminescence of LEDs. Transmission electron microscopy shows a near-surface layer of amorphous silicon (a-Si) with nanoscale carbon-rich inclusions in both ambient and heated targets while an additional polycrystalline Si layer is observed in the heated target only. A Schottky diode is constructed from C+-implanted Si (C:Si) with a semitransparent gold layer on the implanted surface and aluminum on the back of the target. Contact firing at 400 degrees C in flowing nitrogen is used to optimize diode performance. Turn-ON voltage is determined to be about 3 V for all devices. Electroluminescence (EL) spectra show visible orange-red emission indicating luminescence primarily due to a-Si and Si nanoparticles in the LEDs fabricated from C: Si implanted at AT. The high-temperature samples produced EL attributed to a-Si and porous silicon carbide.

引用

页码：914 / 918

页数：5

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