Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes

被引:38
作者
Bulbul, M. M. [1 ]
Bengi, S. [1 ]
Dokme, I. [2 ]
Altindal, S. [1 ]
Tunc, T. [3 ]
机构
[1] Gazi Univ, Fac Arts & Sci, Dept Phys, TR-06500 Ankara, Turkey
[2] Gazi Univ, Fac Gazi Educ, Dept Sci Educ, TR-06500 Ankara, Turkey
[3] Aksaray Univ, Fac Educ, Dept Sci Educ, TR-68100 Aksaray, Turkey
关键词
crystal defects; ion implantation; light polarisation; optical materials; optical waveguides; photoelasticity; refractive index; HIGH SERIES RESISTANCE; BARRIER DIODES; DIELECTRIC-PROPERTIES; INTERFACE; NANOFIBERS; BLENDS; MODEL; FILMS;
D O I
10.1063/1.3462427
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Au/polyvinyl alcohol (Co,Zn-doped)/n-Si Schottky diodes (SDs) was investigated by considering series resistance effect in the temperature range of 80-400 K. The C-V and G/w-V characteristics confirm that the series resistance (R(s)) and interface state density (N(ss)) of the diode are important parameters that strongly influence the electric parameters of SDs. The crossing of the G/w-V curves appears as an abnormality compared to the conventional behavior of ideal SDs. It is thought that the presence of series resistance keeps this intersection hidden and unobservable in homogeneous SDs but it appears in the case of inhomogeneous SDs. In addition, the high frequency C(m) and G(m)/w values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance and conductance. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3462427]
引用
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页数:6
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