Modification of tetrahedral amorphous carbon film by concurrent Ar ion bombardment during deposition

被引:32
作者
Cheah, LK [1 ]
Shi, X [1 ]
Tay, BK [1 ]
Liu, E [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
amorphous carbon; ion bombardment; filtered cathodic vacuum arc;
D O I
10.1016/S0257-8972(98)00462-9
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The surface morphology, mechanical and optical properties of tetrahedral amorphous carbon (ta-C) films by concurrent Ar ion bombardment during filtered cathodic vacuum are (FCVA) deposition are investigated. The Ar ions were produced by an RF ion beam source at different ion energies ranging from 60 eV to 500 eV, in order to study the Ar ion-induced modification of ta-C films. Atomic force microscopy shows that all films are atomically smooth, with roughnesses (RMS) ranging from 0.17 to 0.43 nm. A rougher film surface has been attributed to a higher Ar ion energy. The compressive stress in the ta-C films ranges from 6.6 to 11.2 GPa and the microhardness from 34 to 67 GPa. A lower compressive stress and microhardness were observed at a higher Ar ion energy. The optical absorption spectrum shows that the edge has shifted to the lower photon energy side with the increasing Ar ion energy. The optical band gap decreases from 2.61 to 1.52 eV as the Ar ion energy is increased from 60 eV to 500 eV. The compressive stress, microhardness, optical absorption and optical band gap information suggests that the sp(2)-bonded carbon atoms in the sp(3) matrix increase with the increasing Ar ion energy. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:91 / 96
页数:6
相关论文
共 18 条
[1]  
Aksenov I. I., 1980, Soviet Physics - Technical Physics, V25, P1164
[2]   Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc [J].
Cheah, LK ;
Xu, S ;
Tay, BK .
ELECTRONICS LETTERS, 1997, 33 (15) :1339-1340
[3]  
CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11
[4]   PROPERTIES OF FILTERED-ION-BEAM-DEPOSITED DIAMOND-LIKE CARBON AS A FUNCTION OF ION ENERGY [J].
FALLON, PJ ;
VEERASAMY, VS ;
DAVIS, CA ;
ROBERTSON, J ;
AMARATUNGA, GAJ ;
MILNE, WI ;
KOSKINEN, J .
PHYSICAL REVIEW B, 1993, 48 (07) :4777-4782
[5]   OPTICAL DISPERSION-RELATIONS FOR AMORPHOUS-SEMICONDUCTORS AND AMORPHOUS DIELECTRICS [J].
FOROUHI, AR ;
BLOOMER, I .
PHYSICAL REVIEW B, 1986, 34 (10) :7018-7026
[6]   DETERMINING HYBRIDIZATION DIFFERENCES FOR AMORPHOUS-CARBON FROM THE XPS C-1S ENVELOPE [J].
JACKSON, ST ;
NUZZO, RG .
APPLIED SURFACE SCIENCE, 1995, 90 (02) :195-203
[7]   SUBSTANTIATION OF SUBPLANTATION MODEL FOR DIAMOND-LIKE FILM GROWTH BY ATOMIC-FORCE MICROSCOPY [J].
LIFSHITZ, Y ;
LEMPERT, GD ;
GROSSMAN, E .
PHYSICAL REVIEW LETTERS, 1994, 72 (17) :2753-2756
[8]   Control of film properties during filtered arc deposition [J].
Martin, PJ ;
Bendavid, A ;
Kinder, TJ .
SURFACE & COATINGS TECHNOLOGY, 1996, 81 (01) :36-41
[9]   COMPRESSIVE-STRESS-INDUCED FORMATION OF THIN-FILM TETRAHEDRAL AMORPHOUS-CARBON [J].
MCKENZIE, DR ;
MULLER, D ;
PAILTHORPE, BA .
PHYSICAL REVIEW LETTERS, 1991, 67 (06) :773-776
[10]   PROPERTIES OF DIAMOND-LIKE CARBON [J].
ROBERTSON, J .
SURFACE & COATINGS TECHNOLOGY, 1992, 50 (03) :185-203