Advanced CMOS transistors in the nanotechnology era for high-performance, low-power logic applications

被引:0
|
作者
Chau, R [1 ]
Doczy, M [1 ]
Doyle, B [1 ]
Datta, S [1 ]
Dewey, G [1 ]
Kavalieros, J [1 ]
Jin, B [1 ]
Metz, M [1 ]
Majumdar, A [1 ]
Radosavljevic, M [1 ]
机构
[1] Intel Corp, Comonents Res, Log Technol Dev, Hillsboro, OR 97124 USA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sustaining Moore's Law requires continual transistor miniaturization. Through silicon innovations and breakthroughs, CMOS transistor scaling and Moore's Law will continue at least through early next decade. By combining silicon innovations with other novel nanotechnologies on the same Si platform, it is expected that Moore's Law will extend well into the next decade. This paper describes the most recent advances made in silicon CMOS transistor technology and discusses the challenges and opportunities presented by the recent emerging nanoelectronic devices such as carbon nanotube field-effect transistors (FET), Si-nanowire FETs and III-V FETs for high-performance, low-power logic applications.
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页码:26 / 30
页数:5
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