In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN

被引：90

作者：

Koblmuller, G. ^{[1
]}

Fernandez-Garrido, S.

Calleja, E.

Speck, J. S.

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Polytech Univ, Dipartimento Ingn Elettron, ISOM, Madrid 28040, Spain

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期

关键词：

D O I：

10.1063/1.2789691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Real-time analysis of the growth modes during homoepitaxial (0001) GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer, and step-flow growth modes. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition. (C) 2007 American Institute of Physics.

引用

页数：3

共 18 条

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