Low-voltage topologies for 40-Gb/s circuits in nanoscale CMOS

被引:22
作者
Chalvatzis, Theodoros [1 ]
Yau, Kenneth H. K.
Aroca, Ricardo A.
Schvan, Peter
Yang, Ming-Ta
Voinigescu, Sorin P.
机构
[1] Univ Patras, Patras, Greece
[2] Univ Toronto, Ottawa, ON, Canada
[3] Carleton Univ, Ottawa, ON K1S 5B6, Canada
[4] Univ British Columbia, Broadcom Corp, Nat Sci Engn Council Canada, Associat Profess Engn & Geosci, Vancouver, BC V5Z 1M9, Canada
关键词
decision circuit; flip-flop; GP CMOS; LP CMOS; MOS-CML; retimer; transimpedance amplifier;
D O I
10.1109/JSSC.2007.899093
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents low-voltage circuit topologies for 40-Gb/s communications in 90-nm and 65-nm CMOS. A retiming flip-flop implemented in two different 90-nm CMOS technologies employs a MOS-CML Master-Slave latch topology with only two vertically stacked transistors. Operation at 40 Gb/s is achieved by a combination of low and high-VT MOSFETs in the latch. Fullrate retiming with jitter reduction is demonstrated up to 40 Gb/s. Low-power broadband amplifiers based on resistor-inductor transimpedance feedback are realized in 90-nn and 65-nm CMOS to. investigate the portability of high-speed building blocks between technology nodes. Experiments show that the transimpedance amplifier based on. the CMOS inverter can reach 40-Gb/s operation. with a record power.consumption of 0.15 mW/Gb/s. A comparison between CMOS technologies underlines the importance of General Purpose rather than Low Power processes for high-speed digital design.
引用
收藏
页码:1564 / 1573
页数:10
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