Electroplating Deposition of Bismuth Absorbers for X-ray Superconducting Transition Edge Sensors

被引：3

作者：

Chen, Jian ^{[1
]}

Li, Jinjin ^{[1
]}

Xu, Xiaolong ^{[1
]}

Wang, Zhenyu ^{[2
]}

Guo, Siming ^{[1
]}

Jiang, Zheng ^{[1
]}

Gao, Huifang ^{[1
]}

Zhong, Qing ^{[1
]}

Zhong, Yuan ^{[1
]}

Zeng, Jiusun ^{[2
]}

Wang, Xueshen ^{[1
]}

机构：

[1] Natl Inst Metrol NIM, Beijing 100029, Peoples R China

[2] China Jiliang Univ, Coll Metrol & Measurement Engn, Hangzhou 310018, Peoples R China

来源：

MATERIALS | 2021年 / 14卷 / 23期

关键词：

transition edge sensors; bismuth; absorbers; electroplating deposition; MICROSTRUCTURE;

D O I：

10.3390/ma14237169

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An absorber with a high absorbing efficiency is crucial for X-ray transition edge sensors (TESs) to realize high quantum efficiency and the best energy resolution. Semimetal Bismuth (Bi) has shown greater superiority than gold (Au) as the absorber due to the low specific heat capacity, which is two orders of magnitude smaller. The electroplating process of Bi films is investigated. The Bi grains show a polycrystalline rhombohedral structure, and the X-ray diffraction (XRD) patterns show a typical crystal orientation of (012). The average grain size becomes larger as the electroplating current density and the thickness increase, and the orientation of Bi grains changes as the temperature increases. The residual resistance ratio (RRR) (R-300 K/R-4.2 K) is 1.37 for the Bi film (862 nm) deposited with 9 mA/cm(2) at 40 degrees C for 2 min. The absorptivity of the 5 mu m thick Bi films is 40.3% and 30.7% for 10 keV and 15.6 keV X-ray radiation respectively, which shows that Bi films are a good candidate as the absorber of X-ray TESs.

引用

页数：11

共 31 条

[11] High Energy Gamma-Ray Spectroscopy Using Transition-Edge Sensor With a Superconducting Bulk Tantalum Absorber [J].