Class-D Inverter with MOSFET Nonlinear Parasitic Capacitance

被引：0

作者：

Yonekura, Koyo ^{[1
]}

Wei, Xiuqin ^{[1
]}

Nagashima, Tomoharu ^{[2
]}

Sekiya, Hiroo ^{[2
]}

Suetsugu, Tadashi ^{[3
]}

机构：

[1] Nagasaki Univ, Grad Sch Engn, Nagasaki 8528521, Japan

[2] Chiba Univ, Grad Sch Adv Integrat Sci, Chiba 2638522, Japan

[3] Fukuoka Univ, Dept Elect Engn & Comp Sci, Fukuoka 8140180, Japan

来源：

2015 INTERNATIONAL CONFERENCE ON RENEWABLE ENERGY RESEARCH AND APPLICATIONS (ICRERA) | 2015年

关键词：

Class-D inverter; drain and source ports; nonlinear capacitance; design example; Spice simulation;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, an approach based on analysis for designing the class-D inverter with the nonlinear parasitic capacitance of MOSFET, is proposed. In addition, a design instance as well as its Spice simulation is also provided. The switch voltages obtained from no matter the analysis or Spice simulation, achieve the ZVS condition. Furthermore, the comparisons made between the analyzed and simulated results show that they have a good consistency and prove the validity of the analytical approach presented in this paper. Therefore, the consideration of the nonlinear parasitic capacitance is very important to achieve the ZVS specially at the high-frequency operations.

引用

页码：944 / 948

页数：5

共 50 条

[41] Analyzing the Effect of Parasitic Capacitance in a Full-Bridge Class-D Current Source Rectifier on a High Step-Up Push-Pull Multiresonant Converter
Bilsalam, Anusak
Ekkaravarodome, Chainarin
Chunkag, Viboon
Thounthong, Phatiphat
SUSTAINABILITY, 2021, 13 (10)
[42] IRRELEVANCE OF TONE CLASS-D IN LUGANDA
KALEMA, J
AFRICAN STUDIES, 1977, 36 (02) : 187 - 194
[43] CLASS-D POWER-AMPLIFIER
FEFELOV, NA
RYAZANTSEV, VV
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1985, 28 (02) : 420 - 421
[44] BUILDING CLASS-D AUDIO AMPLIFIERS
Skoryk, Ivan
ELECTRONICS WORLD, 2016, 122 (1957): : 28 - 29
[45] Analysis of a quality class-D amplifier
Himmelstoss, FA
Edelmoser, KH
Anselmi, CC
ICCE - INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS, 1996 DIGEST OF TECHNICAL PAPERS, 1996, : 296 - 297
[46] Test Chip Design and Parameter Extraction of Parasitic Capacitance of MOSFET in VLSI
Ruangphanit, A.
Pedlub, R.
Muanghlua, R.
2017 INTERNATIONAL ELECTRICAL ENGINEERING CONGRESS (IEECON), 2017,
[47] Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance
Yang, Qixuan
Ji, Xiaoli
Xu, Yue
Yan, Feng
IEEE ACCESS, 2019, 7 : 9783 - 9789
[48] Effect of extrinsic impedance and parasitic capacitance on figure of merit of RF MOSFET
Yeh, WK
Ku, CC
Chen, SM
Fang, YK
Chao, CP
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (09) : 2054 - 2060
[49] Influence of MOSFET Parasitic Capacitance on the Operation of Interleaved ZVS Boost Converters
Zimoch, Piotr
Kasprzak, Marcin
Kierepka, Kamil
ENERGIES, 2020, 13 (22)
[50] Analysis and design of class E power amplifier with nonlinear parasitic capacitance at any duty ratio
Zhang, Hao
Ma, Xikui
Wong, Siu Chung
Tse, Chi K.
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2007, 49 (04) : 920 - 923

← 1 2 3 4 5 →