Class-D Inverter with MOSFET Nonlinear Parasitic Capacitance

被引：0

作者：

Yonekura, Koyo ^{[1
]}

Wei, Xiuqin ^{[1
]}

Nagashima, Tomoharu ^{[2
]}

Sekiya, Hiroo ^{[2
]}

Suetsugu, Tadashi ^{[3
]}

机构：

[1] Nagasaki Univ, Grad Sch Engn, Nagasaki 8528521, Japan

[2] Chiba Univ, Grad Sch Adv Integrat Sci, Chiba 2638522, Japan

[3] Fukuoka Univ, Dept Elect Engn & Comp Sci, Fukuoka 8140180, Japan

来源：

2015 INTERNATIONAL CONFERENCE ON RENEWABLE ENERGY RESEARCH AND APPLICATIONS (ICRERA) | 2015年

关键词：

Class-D inverter; drain and source ports; nonlinear capacitance; design example; Spice simulation;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, an approach based on analysis for designing the class-D inverter with the nonlinear parasitic capacitance of MOSFET, is proposed. In addition, a design instance as well as its Spice simulation is also provided. The switch voltages obtained from no matter the analysis or Spice simulation, achieve the ZVS condition. Furthermore, the comparisons made between the analyzed and simulated results show that they have a good consistency and prove the validity of the analytical approach presented in this paper. Therefore, the consideration of the nonlinear parasitic capacitance is very important to achieve the ZVS specially at the high-frequency operations.

引用

页码：944 / 948

页数：5

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