Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

被引：66

作者：

Belhadj, T. ^{[1
]}

Amand, T. ^{[1
]}

Kunold, A. ^{[1
,2
]}

Simon, C. -M. ^{[1
,3
]}

Kuroda, T. ^{[4
]}

Abbarchi, M. ^{[4
]}

Mano, T. ^{[4
]}

Sakoda, K. ^{[4
]}

Kunz, S. ^{[1
]}

Marie, X. ^{[1
]}

Urbaszek, B. ^{[1
]}

机构：

[1] Univ Toulouse, LPCNO, INSA CNRS UPS, F-31077 Toulouse, France

[2] UAM A, Dept Ciencias Basicas, Mexico City 02200, DF, Mexico

[3] Univ Toulouse, IRSAMC, LCAR, CNRS UPS, F-31062 Toulouse, France

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期

关键词：

SPIN; POLARIZATION; RELAXATION;

D O I：

10.1063/1.3473824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k . p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473824]

引用

页数：3

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