Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

被引：6

作者：

Hu Wei-Xuan ^{[1
]}

Cheng Bu-Wen ^{[1
]}

Xue Chun-Lai ^{[1
]}

Zhang Guang-Ze ^{[1
]}

Su Shao-Jian ^{[1
]}

Zuo Yu-Hua ^{[1
]}

Wang Qi-Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Ge; multiple quantum wells; strain compensated; CHEMICAL-VAPOR-DEPOSITION; CRITICAL LAYER THICKNESS; GE; SI; SI(001); GROWTH; PHOTODETECTOR; GERMANIUM; BANDWIDTH; GHZ;

D O I：

10.1088/1674-1056/21/1/017805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n(+)-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.

引用

页数：6

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