Reconstructions on AlN Nonpolar Surfaces in the Presence of Hydrogen

被引：6

作者：

Akiyama, Toru ^{[1
]}

Saito, Yasutaka ^{[1
]}

Nakamura, Kohji ^{[1
]}

Ito, Tomonori ^{[1
]}

机构：

[1] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期

基金：

日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; HIGH-QUALITY ALN; GROWTH; GAN; PSEUDOPOTENTIALS; LAYERS; MOVPE;

D O I：

10.1143/JJAP.51.048002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structures and stability of nonpolar AlN(1 (1) over bar 00) and (11 (2) over bar0) surfaces under hydrogen rich conditions are theoretically investigated by performing total-energy calculations within the density functional theory. The calculated surface energies demonstrate that several hydrogen incorporated structures are favorable depending on the chemical potentials of constituting elements. However, H atoms desorb and the relaxed ideal surfaces are stabilized even under the metal-organic vapor-phase expitaxy growth. These results suggest that the growth processes on AlN nonpolar surfaces are quite different from those of polar surfaces. (c) 2012 The Japan Society of Applied Physics

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页数：2

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