Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers

被引：32

作者：

Hsu, Ming-Yang ^{[1
,2
]}

Lin, Gray ^{[1
,2
]}

Pan, Chien-Hung ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, 1001 Univ Rd, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, 1001 Univ Rd, Hsinchu 30010, Taiwan

[3] TrueLight Corp, Res & Dev Div, Hsinchu 30010, Taiwan

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 26期

关键词：

POLARIZATION;

D O I：

10.1364/OE.25.032697

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated roomtemperature lasing emissions at 1.3-mu m wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indiumtin- oxide over "PC slab-on-substrate" structure. The threshold current density per QD layer was as low as 50 A/cm(2)/layer; however, the optical output was limited to 2 mW. The bandedge lasing mode was identified and near-circular beam with narrow divergence angle less than 2 degrees was achieved. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：32697 / 32704

页数：8

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