High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition

被引：90

作者：

Bointon, Thomas H. ^{[1
]}

Barnes, Matthew D. ^{[1
]}

Russo, Saverio ^{[1
]}

Craciun, Monica F. ^{[1
]}

机构：

[1] Univ Exeter, Coll Engn Math & Phys Sci, Ctr Graphene Sci, Exeter EX4 4QL, Devon, England

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 28期

基金：

英国工程与自然科学研究理事会;

关键词：

chemical vapor deposition; graphene; resistive heating; touch sensors; SINGLE-CRYSTAL GRAPHENE; RAMAN-SPECTROSCOPY; FILMS; GROWTH; CARBON; TRANSFORMATION; HYDROGEN; SIZE;

D O I：

10.1002/adma.201501600

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The growth of graphene using resistive-heating cold-wall chemical vapor deposition (CVD) is demonstrated. This technique is 100 times faster and 99% lower cost than standard CVD. A study of Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and electrical magneto-transport measurements shows that cold-wall CVD graphene is of comparable quality to natural graphene. Finally, the first transparent flexible graphene capacitive touch-sensor is demonstrated. © 2015 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4200 / 4206

页数：7

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