Modeling of IGBT resistive and inductive turn-on behavior

被引：65

作者：

Bryant, Angus T. ^{[1
]}

Lu, Liqing ^{[2
]}

Santi, Enrico ^{[2
]}

Hudgins, Jerry L. ^{[3
]}

Palmer, Patrick R. ^{[4
]}

机构：

[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[4] Univ Cambridge, Dept Engn, Ctr Adv Photon & Elect, Cambridge CB2 1PZ, England

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2008年 / 44卷 / 03期

关键词：

compact semiconductor device models; insulated-gate bipolar-transistor (IGBT) turn-on; interaction; physics-based semiconductor modeling;

D O I：

10.1109/TIA.2008.921384

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Although insulated-gate bipolar-transistor (IGBT) turn-on losses can be comparable to turn-off losses, IGBT turn-on has not been as thoroughly studied in the literature. In the present work IGBT turn on under resistive and inductive load conditions is studied in detail through experiments, finite element simulations, and circuit simulations using physics-based semiconductor models. Under resistive load conditions, it is critical to accurately model the conductivity-modulation phenomenon. Under clamped inductive load conditions at turn-on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. Physics-based IGBT and diode models are used that have been proved accurate in the simulation of IGBT turn-off.

引用

页码：904 / 914

页数：11

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