Photodetectors Based on MoS2/MAPbBr3 van der Waals Heterojunction

被引：12

作者：

Meng, Fanxu ^{[1
,2
]}

Xu, Zhongquan ^{[1
]}

Zeng, Yonghong ^{[1
]}

Wang, Changhao ^{[2
]}

Zou, Ya'nan ^{[2
]}

Wageh, Swelm ^{[3
]}

Al-Ghamdi, Ahmed A. ^{[3
]}

Guo, Zhinan ^{[1
]}

Zhang, Han ^{[1
]}

机构：

[1] Shenzhen Univ, Int Collaborat Lab 2D Mat Optoelect Sci & Technol, Coll Phys & Optoelect Engn, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China

[2] Jilin Inst Chem Technol, Ctr Characterizat & Anal, Coll Sci, Jilin 132022, Jilin, Peoples R China

[3] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah 21589, Saudi Arabia

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Photodetectors; Films; Heterojunctions; Absorption; Lighting; Perovskites; Performance evaluation; Van der Waals heterojunction; transition metal dichalcogenides; perovskites; single crystal; photodetector; PEROVSKITE; HETEROSTRUCTURE; TRANSPORT;

D O I：

10.1109/LED.2022.3148195

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a new approach to construct van der Waals heterojunction photodetectors is presented, that MoS2 flakes are transferred to the surface of MAPbBr(3) single crystals. Effective charge transfer process is demonstrated at MoS2/MAPbBr(3) interface, leading to a responsivity of 68.7 A/W at 1 V bias with an illumination of 0.20 mW/cm(2) at 532 nm. By combining the absorption band of both MoS2 and MAPbBr(3), the inherent long-wavelength filtering capability with a cut-off at 655 nm is obtained for the photodetector.

引用

页码：414 / 417

页数：4

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