Addressing 3D metrology challenges by using a multiple detector CDSEM

被引:2
作者
Hiroyama, Mitsuo [1 ]
Murakawa, Tsutomu [1 ]
Kuribara, Masayuki [1 ]
Iwai, Toshimichi [1 ]
Soma, Minoru [1 ]
Iko, Ikuo [1 ]
Seyama, Masahiro [1 ]
Matsumoto, Jun [1 ]
Nakamura, Takayuki [1 ]
Hakii, Hidemitsu [2 ]
Yonekura, Isao [2 ]
Kawashita, Masashi [2 ]
Nishiyama, Yasushi [2 ]
Tanaka, Keishi [2 ]
Komoto, Kenji [2 ]
机构
[1] Advantest Corp, Saitama R&D Ctr, 1-5 Shin Tone, Kazo, Saitama 3491158, Japan
[2] Toppan Printing Co Ltd, Fundamental Technol Res Lab, Saitama, 3458508, Japan
来源
PHOTOMASK TECHNOLOGY 2011 | 2011年 / 8166卷
关键词
NGL masks; Multiple detector CDSEM; 3D metrology; SWA; Pattern height;
D O I
10.1117/12.896982
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In next generation lithography (NGL) for the 22nm node and beyond, the three dimensional (3D) shape measurements of side wall angle (SWA) and height of the photomask pattern will become critical for controlling the exposure characteristics and wafer printability. Until today, cross-section SEM (X-SEM) and Atomic Force Microscope (AFM) methods are used to make 3D measurements, however, these techniques require time consuming preparation and observation. This paper presents an innovative technology for 3D measurement using a multiple detector CDSEM and reports its accuracy and precision.
引用
收藏
页数:12
相关论文
共 4 条
[1]  
Fukaya H., P SPIE, V8081, P8081
[2]  
HAKII H, P SPIE, V7379
[3]  
Harada S., P SPIE, V7823, P7823
[4]  
Yonekura I., P SPIE, V7971, P7971