Novel synthesis of silicon carbide nanotubes by microwave heating of blended silicon dioxide and multi-walled carbon nanotubes: The effect of the heating temperature

被引：19

作者：

Tony, V. C. S. ^{[1
]}

Voon, C. H. ^{[1
]}

Lee, C. C. ^{[2
]}

Lim, B. Y. ^{[3
]}

Arshad, M. K. Md. ^{[1
]}

Gopinath, S. C. B. ^{[1
,4
]}

Foo, K. L. ^{[1
]}

Ruslinda, A. R. ^{[1
]}

Hashim, U. ^{[1
]}

Nashaain, M. N. ^{[5
]}

机构：

[1] Univ Malaysia Perlis, Inst Nano Elect Engn, Kangar 01000, Perlis, Malaysia

[2] Univ Malaysia Perlis, Sch Mfg Engn, Arau 02600, Perlis, Malaysia

[3] Univ Malaysia Perlis, Sch Mat Engn, Arau 02600, Perlis, Malaysia

[4] Univ Malaysia Perlis, Sch Bioproc Engn, Arau 02600, Perlis, Malaysia

[5] Adv Mat Res Ctr, Kulim Hitech Pk, Kulim 09000, Kedah, Malaysia

来源：

CERAMICS INTERNATIONAL | 2016年 / 42卷 / 15期

关键词：

Microwave processing; Solid state reaction; Electron microscopy; Carbide; CHEMICAL-VAPOR-DEPOSITION; BETA-SIC NANOWIRES; CARBOTHERMAL REDUCTION; SOL-GEL; LARGE-SCALE; GROWTH; CATALYST; WHISKERS; CERAMICS; TEMPLATE;

D O I：

10.1016/j.ceramint.2016.08.080

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon carbide nanomaterials, especially silicon carbide nanotubes (SiCNTs), are known as excellent materials for high-power and high-temperature harsh environment electronics applications because of the unique properties of SiCNTs, such as a high thermal stability, good chemical inertness and excellent electronic properties. In this article, we presented a novel synthesis of SiCNTs by microwave heating a blend of silicon dioxide (SiO2) and multi-walled carbon nanotubes (MWCNTs) at a ratio of 1:3 at temperatures of 1350 degrees C, 1400 degrees C and 1450 degrees C. The effects of different heating temperatures on the synthesis of SiCNTs were studied. X-ray diffraction revealed the presence of single phase beta-SiC for syntheses conducted at 1400 degrees C and 1450 degrees C. Meanwhile, field-emission scanning electron microscopy images showed that no residual silicon dioxide or MWCNTs was observed with syntheses conducted at 1400 degrees C and 1450 degrees C. High-magnification transmission electron microscopy revealed that the tubular structure of the MWCNTs was preserved and that SiCNTs had a lattice fringe spacing of 0.261 nm corresponding to the (111) plane of beta-SiC. Photoluminescence spectroscopy showed the presence of a beta-SiC peak at a wavelength of 465 nm, and the band gap energy of SiCNTs was 2.67 eV. Fourier transform infrared spectroscopy analysis revealed that the absorption band of the Si-C bond was detected at 803 cm(-1). The purity of SiCNTs synthesized at 1400 degrees C and 1450 degrees C is high, as indicated by the low weight loss in thermo-gravimetric analysis. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：17642 / 17649

页数：8

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