Interdiffusion at the BaCuSeF/ZnTe interface

被引：4

作者：

Zakutayev, Andriy ^{[1
]}

Tate, Janet ^{[1
]}

Xie, Sujing ^{[2
]}

Gibbons, Brady J. ^{[3
]}

Platt, Heather A. S. ^{[4
]}

Keszler, Douglas A. ^{[4
]}

Barati, Alireza ^{[5
]}

Klein, Andreas ^{[5
]}

Jaegermann, Wolfram ^{[5
]}

机构：

[1] Oregon State Univ, Dept Phys, Corvallis, OR 97331 USA

[2] CAMCOR High Resolut & Analyt Facil, Eugene, OR 97403 USA

[3] Oregon State Univ, Sch Mech Ind & Mfg Engn, Corvallis, OR 97331 USA

[4] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA

[5] Tech Univ Darmstadt, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

基金：

美国国家科学基金会;

关键词：

BaCuChF; p-Type transparent conductor; Wide-band gap semiconductor; Thin film chalcogenide solar cells; Scanning transmission electron microscopy; Energy dispersive x-ray analysis; Copper vacancy; Fermi level pinning; FILM SOLAR-CELLS; MATERIALS-SCIENCE; SEMICONDUCTORS; HETEROJUNCTION; BACUTEF; SE;

D O I：

10.1016/j.tsf.2010.12.125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

BaCuSeF/ZnTe is a model system to investigate physical and chemical properties of the interfaces of non-oxide wide-bandgap p-type semiconductors with materials used in chalcogenide solar cells. The BaCuSeF/ZnTe interface was studied using electron microscopy and photoelectron spectroscopy. Both techniques indicate that Se and Cu from BaCuSeF diffuse into ZnTe creating an interdiffused layer between these two materials. The interdiffusion may be attributed to the differences in materials formation enthalpies and to Fermi level pinning in BaCuSeF. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7369 / 7373

页数：5

共 25 条

[1] Formation and characterisation of MoSe2 for Cu(In,Ga)Se2 based solar cells [J].