One Class Process Anomaly Detection Using Kernel Density Estimation Methods

被引:17
作者
Lang, Christopher, I [1 ]
Sun, Fan-Keng [1 ]
Lawler, Bruce [2 ]
Dillon, Jack [3 ]
Al Dujaili, Ash [3 ]
Ruth, John [3 ]
Cardillo, Peter [3 ]
Alfred, Perry [3 ]
Bowers, Alan [3 ]
Mckiernan, Adrian [3 ]
Boning, Duane S. [1 ]
机构
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
[2] MIT, Machine Intelligence Mfg & Operat, Cambridge, MA 02139 USA
[3] Analog Devices Inc, Norwood, MA 02062 USA
关键词
Anomaly detection; Kernel; Detectors; Plasmas; Ion implantation; Probability distribution; Estimation; Anomalies; anomaly detection; faults; fault detection; one-class classification; ion implantation; kernel density estimation; plasma etch; time series; NEAREST-NEIGHBOR RULE; FAULT-DETECTION; BANDWIDTH SELECTION; CLASSIFICATION; DRIFT;
D O I
10.1109/TSM.2022.3181468
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a one-class anomaly detection method that uses time series sensor data to detect anomalies or faults in semiconductor fabrication processes. Critically, this method is trained using only small amounts of known successful run data, making it possible to implement for many processes and recipes without needing example faults. The proposed method uses kernel density estimation (KDE) to create probability distributions for sensor values during nominal processing. When classifying unseen sensor data, we determine the likelihood that it arose from this (often non-Gaussian) nominal distribution, allowing us to classify new signals as nominal, or faulty. We present model extensions that enable adaptation to changes in the underlying process, i.e., concept drift, as well as transfer learning techniques that enable training of anomaly detectors for new process recipes with less data. The proposed methods are tested on historical data from plasma etch and ion implantation processes, outperforming benchmark methods including traditional statistical process control (SPC), one-class support vector machine (OC-SVM), and variational auto-encoder (VAE) based detectors.
引用
收藏
页码:457 / 469
页数:13
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