Ambipolar field effect transistors with heterojunction of organic semiconductors

被引：14

作者：

Yamane, Kazuhiko ^{[1
]}

Yanagi, Hisao ^{[1
]}

Hotta, Shu ^{[2
]}

机构：

[1] Nara Inst Sci Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[2] Kyoto Inst Technol, Grad Sch Sci & Technol, Dept Macromol Sci & Technol, Kyoto 6068585, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 10期

关键词：

organic semiconductor; organic field effect transistor; ambipolar characteristics; heterostructure;

D O I：

10.1016/j.tsf.2007.08.091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ambipolar operations in organic field effect transistors (OFETs) with heterojunction structures have been demonstrated. We have selected a biphenyl capped thiophene oligomer (BP2T) as p-type and fullerene (C-60) as n-type materials in the active layer of the OFETs. To investigate their intrinsic behaviors we measured the OFET characteristics in vacuum without breaking vacuum after device fabrication. Their electric characteristics depended on the heterostructure configurations. The OFET prepared with a co-deposited thin film of BP2T/C-60 showed high carrier transport performance and both carriers were efficiently injected into the channel of the active layer. In the bi-layered device, ambipolar characteristics were only observed when the n-type C60 molecules penetrated deeply into the BP2T layer. (c) 2007 Published by Elsevier B.V.

引用

页码：3157 / 3161

页数：5

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