Displacement current of Au/p-diamond Schottky contacts

被引:0
|
作者
Aoki, Toshichika [1 ]
Teraji, Tokuyuki [2 ]
Koide, Yasuo [2 ]
Shiojima, Kenji [1 ]
机构
[1] Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan
[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
关键词
p-diamond; p-GaN; Schottky contact; I-V characteristic; AC operation; GAN; DIODES; DEPOSITION; OPERATION; MECHANISM; BARRIER;
D O I
10.1016/j.mssp.2016.12.012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, the displacement current of Au/p-diamond Schottky contacts was studied by comparing them with low-Mg-doped p-GaN Schottky contacts. In the current voltage (I-V) characteristics, the current was proportional to the voltage sweep speed at V > -1.5 V. The differential output waveform was obtained through AC operation. Therefore, the displacement current was dominant in the low voltage region where in the true current was extremely small due to the large Schottky barrier height of 1.57 eV. The memory effect, due to the charge and discharge of localized acceptor-type deep-level defects, was negligible in the I-V curve. A clear AC differential signal was confirmed. This suggested that the interface defect density of the p-diamond contacts was very small compared to the p-GaN contacts. Hence, p-diamond Schottky contacts were expected to be a good candidate for a key device such as a phase modulator in a wireless transmitter.
引用
收藏
页码:207 / 212
页数:6
相关论文
共 50 条
  • [21] Thermal sensitivity from current-voltage-measurement temperature characteristics in Au/n-GaAs Schottky contacts
    Turut, Abdulmecit
    Efeoglu, Hasan
    TURKISH JOURNAL OF PHYSICS, 2021, 45 (05): : 268 - 280
  • [22] Analysis of current-voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range
    Mtangi, W.
    van Rensburg, P. J. Janse
    Diale, M.
    Auret, F. D.
    Nyamhere, C.
    Nel, J. M.
    Chawanda, A.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 171 (1-3): : 1 - 4
  • [23] On selenium p-n heterojunctions and Schottky contacts
    Moench, Winfried
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (02) : 1097 - 1101
  • [24] ICTS measurements for p-GaN Schottky contacts
    Shiojima, K
    Sugitani, S
    Sakai, S
    APPLIED SURFACE SCIENCE, 2002, 190 (1-4) : 318 - 321
  • [25] Normally-off n-ZnO/p-diamond heterojunction field effect transistor with recessed gate and current distribution layer
    Lin, Wang
    Zhao, Pengfei
    He, Liang
    He, Zhiyuan
    Wang, Qiliang
    Lv, Xianyi
    Li, Liuan
    MICROELECTRONICS JOURNAL, 2023, 142
  • [26] Effect of thermal annealing on electrical and structural properties of Ni/Au/n-GaN Schottky contacts
    Akkaya, A.
    Esmer, L.
    Kantar, B. Boyarbay
    Cetin, H.
    Ayyildiz, E.
    MICROELECTRONIC ENGINEERING, 2014, 130 : 62 - 68
  • [27] Epitaxial growth of ZnO nanorods on diamond and negative differential resistance of n-ZnO nanorod/p-diamond heterojunction
    Li, Hongdong
    Sang, Dandan
    Cheng, Shaoheng
    Lu, Jing
    Zhai, Xiuhua
    Chen, Lixue
    Pei, Xiao-qiang
    APPLIED SURFACE SCIENCE, 2013, 280 : 201 - 206
  • [28] Effects of Annealing on Co/Au and Ni/Au Schottky Contacts on β-Ga2O3
    Favela, Elizabeth, V
    Zhang, Kun
    Cabral, Matthew J.
    Ho, Alice
    Kim, Sun Ho
    Das, Kalyan K.
    Porter, Lisa M.
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (03) : 1927 - 1936
  • [29] Properties of Pt/Au Schottky contacts on GaN prepared by pulsed laser deposition
    Michalka, M
    Skriniarová, J
    Uherek, F
    Gurnik, P
    Donoval, D
    Kordos, P
    EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 15 - 20
  • [30] Schottky barrier height engineering of Al contacts on Si by embedded Au nanoparticles
    Gorji, Mohammad Saleh
    Razak, Khairunisak Abdul
    Cheong, Kuan Yew
    MICROELECTRONIC ENGINEERING, 2015, 133 : 110 - 119