Scaling of Data Retention Statistics in Phase-Change Random Access Memory

被引：11

作者：

Kwon, Yongwoo ^{[1
]}

Park, Byoungnam ^{[1
]}

Kang, Dae-Hwan ^{[2
]}

机构：

[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea

[2] Samsung Elect Co Ltd, Semicond Res & Dev Ctr, Hwasung 445701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 05期

关键词：

Phase-change random access memory (PC-RAM); data retention; modeling; CRYSTALLIZATION; KINETICS;

D O I：

10.1109/LED.2015.2414952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A scaling law on data retention statistics is presented for sub-20-nm phase-change random access memory with a confined cell structure. Nucleation and growth was modeled with phase-field method. Universality encompassing cell size, temperature, and active phase-change material was found.

引用

收藏

页码：454 / 456

页数：3

相关论文

共 15 条

[1]

[Anonymous], 2008, IEEE INT EL DEV M

[2]

[Anonymous], P IEEE INT EL DEV M

[3] Kinetics of phase change I - General theory [J].

Avrami, M .

JOURNAL OF CHEMICAL PHYSICS, 1939, 7 (12) :1103-1112

[4] Enhanced amorphous stability of carbon-doped Ge2Sb2Te5: Ab Initio investigation [J].

Cho, Eunae ;

Youn, Yong ;

Han, Seungwu .

APPLIED PHYSICS LETTERS, 2011, 99 (18)

[5] Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials [J].

Hegedus, J. ;

Elliott, S. R. .

NATURE MATERIALS, 2008, 7 (05) :399-405

[6] Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio [J].

Jeong, Jeung-Hyun ;

Lee, Hyun Seok ;

Lee, Suyoun ;

Lee, Taek Sung ;

Kim, Won Mok ;

Zhe, Wu ;

Kim, Seul Cham ;

Oh, Kyu Hwan ;

Cheong, Byung-Ki .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (03)

[7] Crystal morphology and nucleation in thin films of amorphous Te alloys used for phase change recording [J].

Kalb, JA ;

Wen, CY ;

Spaepen, F ;

Dieker, H ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)

[8]

Kang M.J., 2011, IEEE INT ELECT DEVIC, P39, DOI [DOI 10.1109/IEDM.2011.6131478, 10.1109/IEDM.2011.6131478]

[9] Analysis of Intrinsic Variation of Data Retention in Phase-Change Memory Using Phase-Field Method [J].

Kwon, Yongwoo ;

Kang, Dae-Hwan ;

Lee, Keun-Ho ;

Park, Young-Kwan ;

Chung, Chil-Hee .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (03) :411-413

[10] Statistics of crystallization kinetics in nanoscale systems [J].

Kwona, Yongwoo ;

Kang, Dae-Hwan .

SCRIPTA MATERIALIA, 2014, 78-79 :29-32