Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers

被引：10

作者：

Wei, Yang ^{[1
]}

Ma, Wenquan ^{[1
]}

Huang, Jianliang ^{[1
]}

Zhang, Yanhua ^{[1
]}

Huo, Yongheng ^{[1
]}

Cui, Kai ^{[1
]}

Chen, Lianghui ^{[1
]}

Shi, Yanli ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China

[2] Kunming Inst Phys, Dept Basic Res & Dev, Kunming 650023, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 10期

关键词：

MU-M; DETECTOR; TEMPERATURE; GROWTH;

D O I：

10.1063/1.3563709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a modified dots-in-a-well (DWELL) infrared photodetector by inserting some very thin GaAs or AlGaAs layers into the InAs dots. The photoluminescence (PL) measurements indicate that the modified DWELL structure with the insertion layers (ILs) of GaAs has a larger peak intensity and a narrower PL linewidth than that without the ILs. For the modified DWELL detector with AlGaAs ILs, the peak detection wavelength reaches very long infrared window of 14.1 mu m. The peak detectivity D* is 1.1 x 10(8) cm Hz(1/2)/W at 77 K under normal incidence infrared irradiation. (C) 2011 American Institute of Physics. [doi:10.1063/1.3563709]

引用

页数：3

共 19 条

[1] Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots [J].

Adawi, AM ;

Zibik, EA ;

Wilson, LR ;

Lemaître, A ;

Cockburn, JW ;

Skolnick, MS ;

Hopkinson, M ;

Hill, G ;

Liew, SL ;

Cullis, AG .

APPLIED PHYSICS LETTERS, 2003, 82 (20) :3415-3417

[2] Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony [J].

Aivaliotis, P. ;

Wilson, L. R. ;

Zibik, E. A. ;

Cockburn, J. W. ;

Steer, M. J. ;

Liu, H. Y. .

APPLIED PHYSICS LETTERS, 2007, 91 (01)

[3] Response spectra from mid- to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors [J].

Aslan, B ;

Liu, HC ;

Korkusinski, M ;

Cheng, SJ ;

Hawrylak, P .

APPLIED PHYSICS LETTERS, 2003, 82 (04) :630-632

[4] Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature [J].

Bhattacharya, P ;

Su, XH ;

Chakrabarti, S ;

Ariyawansa, G ;

Perera, AGU .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[5] Demonstration of 640x512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array [J].

Gunapala, S. D. ;

Bandara, S. V. ;

Hill, C. J. ;

Ting, D. Z. ;

Liu, J. K. ;

Rafol, S. B. ;

Blazejewski, E. R. ;

Mumolo, J. M. ;

Keo, S. A. ;

Krishna, S. ;

Chang, Y.-C. ;

Shott, C. A. .

INFRARED PHYSICS & TECHNOLOGY, 2007, 50 (2-3) :149-155

[6] Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K [J].

Krishna, S ;

Raghavan, S ;

von Winckel, G ;

Rotella, P ;

Stintz, A ;

Morath, CP ;

Le, D ;

Kennerly, SW .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2574-2576

[7]

LIM K, 2007, APPL PHYS LETT, V90

[8] High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer [J].

Ling, H. S. ;

Wang, S. Y. ;

Lee, C. P. ;

Lo, M. C. .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[9]

Liu HC, 2003, OPTO-ELECTRON REV, V11, P1

[10] Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure [J].

Liu, HY ;

Hopkinson, M ;

Harrison, CN ;

Steer, MJ ;

Frith, R ;

Sellers, IR ;

Mowbray, DJ ;

Skolnick, MS .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :2931-2936

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