3D resistive RAM cell design for high-density storage class memory-a review

被引：47

作者：

Hudec, Boris ^{[1
,2
]}

Hsu, Chung-Wei ^{[1
,2
]}

Wang, I-Ting ^{[1
,2
]}

Lai, Wei-Li ^{[1
,2
]}

Chang, Che-Chia ^{[1
,2
]}

Wang, Taifang ^{[1
,2
]}

Frohlich, Karol ^{[3
]}

Ho, Chia-Hua ^{[4
]}

Lin, Chen-Hsi ^{[4
]}

Hou, Tuo-Hung ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

[3] Slovak Acad Sci, Inst Elect Engn, Bratislava, Slovakia

[4] Winbond Elect Corp, Taichung, Taiwan

来源：

SCIENCE CHINA-INFORMATION SCIENCES | 2016年 / 59卷 / 06期

关键词：

RRAM; ReRAM; resistive switching; crossbar; cross-point; storage class memory; 3D integration; atomic layer deposition; selector; PHASE-CHANGE MEMORY; DIODE; RRAM; MEMRISTOR; HFOX;

D O I：

10.1007/s11432-016-5566-0

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes-3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

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