Influence of grain sizes on the mobility of organic thin-film transistors

被引：165
作者：
Di Carlo, A
Piacenza, F
Bolognesi, A
Stadlober, B
Maresch, H
机构：
[1] Univ Roma Tor Vergata, INFM, Dept Elect Engn, I-00133 Rome, Italy
[2] RAPTECH Srl, I-00173 Rome, Italy
[3] Joanneum Res, Inst Nanostruct Mat & Photon, A-8160 Weiz, Austria
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 26期
关键词：
D O I：
10.1063/1.1954901
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A mobility model for organic thin-film transistors (OTFTs) has been considered that fully accounts for the effect of grains and grain boundaries of the organic layer. The model has been applied to a top contact pentacene OTFT. Comparison between simulation results and experimental data shows a strong dependence of mobility as a function of grain size. The field-effect-extracted mobility is not linearly related to the grain size, but presents a rather abrupt reduction for a grain size smaller than 2 mu m. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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共 15 条
  • [1] A two-dimensional simulation of organic transistors
    Alam, MA
    Dodabalapur, A
    Pinto, MR
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (08) : 1332 - 1337
  • [2] Effects of grain boundaries, field-dependent mobility, and interface trap states on the electrical characteristics of pentacene TFT
    Bolognesi, A
    Berliocchi, M
    Manenti, M
    Di Carlo, A
    Lugli, P
    Lmimouni, K
    Dufour, C
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) : 1997 - 2003
  • [3] Large drift-diffusion and Monte Carlo modeling of organic semiconductor devices
    Bolognesi, A
    Di Carlo, A
    Lugli, P
    Conte, G
    [J]. SYNTHETIC METALS, 2003, 138 (1-2) : 95 - 100
  • [4] Influence of carrier mobility and contact barrier height on the electrical characteristics of organic transistors
    Bolognesi, A
    Di Carlo, A
    Lugli, P
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (24) : 4646 - 4648
  • [5] Device model for single carrier organic diodes
    Davids, PS
    Campbell, IH
    Smith, DL
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) : 6319 - 6325
  • [6] Organic thin-film transistors: A review of recent advances
    Dimitrakopoulos, CD
    Mascaro, DJ
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) : 11 - 27
  • [7] On-current modeling of large-grain polycrystalline silicon thin-film transistors
    Farmakis, FV
    Brini, J
    Kamarinos, G
    Angelis, CT
    Dimitriadis, CA
    Miyasaka, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (04) : 701 - 706
  • [8] Ambipolar charge injection and transport in a single pentacene monolayer island
    Heim, T
    Lmimouni, K
    Vuillaume, D
    [J]. NANO LETTERS, 2004, 4 (11) : 2145 - 2150
  • [9] Tunnel current in organic field-effect transistors
    Horowitz, G
    [J]. SYNTHETIC METALS, 2003, 138 (1-2) : 101 - 105
  • [10] 2-DIMENSIONAL SIMULATION STUDY OF FIELD-EFFECT OPERATION IN UNDOPED POLY-SI THIN-FILM TRANSISTORS
    KONG, HS
    LEE, CC
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) : 6122 - 6131
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