Effect of atomic hydrogen exposure on hydrogenated amorphous carbon thin films

被引：1

作者：

Haruyama, Yuichi ^{[1
,2
]}

Morimoto, Daiki ^{[1
,2
]}

Heya, Akira ^{[3
]}

Sumitomo, Koji ^{[3
]}

Ito, Seigo ^{[3
]}

Yokota, Kumiko ^{[4
]}

Tagawa, Masahito ^{[4
]}

机构：

[1] Univ Hyogo, Grad Sch Engn, 3-1-2 Koto, Kamigori, Hyogo 6781205, Japan

[2] Univ Hyogo, Lab Adv Sci & Technol Ind, 3-1-2 Koto, Kamigori, Hyogo 6781205, Japan

[3] Univ Hyogo, Grad Sch Engn, 2167 Shosha, Himeji, Hyogo 6712280, Japan

[4] Kobe Univ, Grad Sch Engn, Nada Ku, 1-1 Rokkodai, Kobe, Hyogo 6578501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 12期

关键词：

hydrogenated amorphous carbon; atomic hydrogen exposure; etching; X-ray photoelectron spectroscopy; DIAMOND-LIKE-CARBON; RAY PHOTOELECTRON-SPECTROSCOPY; CLUSTER ION; SP(3);

D O I：

10.35848/1347-4065/ac359b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of atomic hydrogen exposure on hydrogenated amorphous carbon (a-C:H) films was investigated by X-ray photoelectron spectroscopy (XPS). From the dependence of the wide-scan XPS spectra of an a-C:H film on atomic hydrogen exposure, it was shown that the film was etched with an etching rate of 0.2 nm min(-1). In addition, by analyzing the C 1s XPS spectra, the coordination of C atoms in the a-C:H film was investigated as a function of the atomic hydrogen exposure and photoelectron emission angle. This indicated that the coordination of C atoms at the surface of the a-C:H film was not influenced by atomic hydrogen exposure. Therefore, we propose that the depth profile of a-C:H films can be measured with no damage using atomic hydrogen etching.

引用

页数：4

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