A CMOS RF RMS detector for built-in testing of wireless transceivers

被引:54
作者
Valdes-Garcia, A [1 ]
Venkatasubramanian, R [1 ]
Srinivasan, R [1 ]
Silva-Martinez, J [1 ]
Sánchez-Sinencio, ES [1 ]
机构
[1] Texas A&M Univ, Dept Elect Engn, Analog & Mixed Signal Ctr, College Stn, TX 77843 USA
来源
23RD IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS | 2005年
关键词
D O I
10.1109/VTS.2005.8
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A CMOS RF RMS detector is introduced. It generates a DC proportional to the RMS voltage amplitude of an RF signal. Its high input impedance and small silicon area make it suitable for the built-in testing (BIT) of critical RF blocks of a transceiver such as a Low Noise Amplifier (LNA) and Power Amplifier (PA) without affecting their performance and with minimum area overhead. The use of this structure in the fault detection and diagnosis of a wireless transceiver is described and illustrated with an example. The transistor- level implementation of the proposed circuit is discussed in detail. Post-layout simulation results using CMOS 0.35 mu m technology show that this testing device is able to perform an RF to DC conversion at 2.4GHz in a dynamic range of 20dB using an area of only 0.0135mm(2) and presenting an equivalent input capacitance of 22.5fF.
引用
收藏
页码:249 / 254
页数:6
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