Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel

被引：21

作者：

Chou, YC ^{[1
]}

Leung, D ^{[1
]}

Lai, R ^{[1
]}

Grundbacher, R ^{[1
]}

Barsky, M ^{[1
]}

Van, Q ^{[1
]}

Tsai, R ^{[1
]}

Wojtowicz, M ^{[1
]}

Eng, D ^{[1
]}

Tran, L ^{[1
]}

Block, T ^{[1
]}

Liu, PH ^{[1
]}

Nishimoto, M ^{[1
]}

Oki, A ^{[1
]}

机构：

[1] Northrop Grumman Space Technol, Redondo Beach, CA 90278 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 06期

关键词：

activation energy; HEMT; MMICs; reliability;

D O I：

10.1109/LED.2003.813357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-mum T-gate InGaAs-InAlAs-InP HEWS with pseudomorphic In(0.75)Ga(0.25)As channel on 3-in wafers. Lifetest was performed at two temperatures (T(1) = 200 degreesC and T(2) = 215 degreesC) and the amplifiers were stressed at V(ds) of 1 V and I(ds) of 250 mA/mm in a N(2) ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) approximate to 2 x 10(6) h at a junction temperature of 125 degreesC. MTTF was determined by 2-temperature constant current stress using DeltaG(mp) = -20% as the failure criteria. The difference,of reliability performance between 0.07-mum InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In(0.75)Ga(0.25)As channel and 0.1-mum InGaAs-InAlAs-InP HEMT MMICs with In(0.6)Ga(0.4)As channel is also discussed. The achieved high-reliability result demonstrates. a robust 0.07-mum pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.

引用

页码：378 / 380

页数：3

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Lai, R ;

Barsky, M ;

Grundbacher, R ;

Liu, PH ;

Chin, TP ;

Nishimoto, M ;

Elmajarian, R ;

Rodriguez, R ;

Tran, L ;

Gutierrez, A ;

Oki, A ;

Streit, D .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :175-177

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